Amanote Research
Register
Sign In
Discover open access scientific publications
Search, annotate, share and cite publications
Publications by S Boettcher
Measurement of LER in Poly-Silicon Gates in MOSFETS by (S)TEM
Microscopy and Microanalysis
Instrumentation
Related publications
Progress in a New Method of Thickness Measurement by X-Ray Analysis in TEM
Microscopy and Microanalysis
Instrumentation
Revision of Interface Coupling in Ultra-Thin Body Silicon-On-Insulator MOSFETs
Semiconductor Physics, Quantum Electronics and Optoelectronics
Electronic Engineering
Optics
Molecular Physics,
Optical
Electrical
Atomic
Magnetic Materials
Electronic
Procedure for TEM Measurement of Nanoparticles
Microscopy and Microanalysis
Instrumentation
TEM Investigation of Carbide Precipitation in Low Carbon Steels Containing Silicon
Transactions of the Japan Institute of Metals
Memory Characteristics of MOSFETs With Densely Stacked Silicon Nanocrystal Layers in the Gate Oxide Synthesized by Low-Energy Ion Beam
IEEE Electron Device Letters
Electronic Engineering
Optical
Electrical
Magnetic Materials
Electronic
Precise Resistivity Measurement of Submicrometer-Sized Materials by Using TEM With Microprobes
Materials Transactions
Mechanics of Materials
Materials Science
Condensed Matter Physics
Mechanical Engineering
Resistivity Measurement of Silicon Crystals Irradiated by Reactor Neutrons
RADIOISOTOPES
Scaling of the Magnetoconductivity of Silicon MOSFETs: Evidence for a Quantum Phase Transition in Two Dimensions
Physical Review Letters
Astronomy
Physics
Ultra-Narrow Silicon Nanowire (～3 Nm) Gate-All-Around MOSFETs
