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Publications by S. A. Korolev

Simulation of Quality of SiC/Si Interface During MBE Deposition of C on Si

Materialwissenschaft und Werkstofftechnik

Mechanics of Materials

Materials Science

Condensed Matter Physics

Mechanical Engineering

English

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Simulation of Homoepitaxial Growth of Si(100) by MBE.

Nihon Kessho Gakkaishi

English

Analysis of Linear-Doped Si/SiC Power LDMOSFETs Based on Device Simulation

IEEE Transactions on Electron Devices

Electronic Engineering

Magnetic Materials

English

Formation of Graphene Atop a Si Adlayer on the C-Face of SiC

Physical Review Materials

Materials Science

English

Formation of High Quality Si1-xGex/Si Crystals Heterostructure Limited Area MBE Growth

English

Ti3SiC2-Formation During Ti–C–Si Multilayer Deposition by Magnetron Sputtering at 650 °C

Instrumentation

Condensed Matter Physics

English

Raman Mapping of 4‐MeV C and Si Channeling Implantation of 6H‐SiC

Journal of Raman Spectroscopy

Materials Science

English

Growth Mechanism of SiC Chemical Vapor Deposition: Adsorption and Surface Reactions of Active Si Species

English

Mechanical Stability of Ultrathin Ge∕Si Film on SiO2: The Effect of Si∕SiO2 Interface

Journal of Applied Physics

English

Properties of GaN Nanocolumns Grown by Plasma - Assisted MBE on Si (111) Substrates

Acta Physica Polonica A

English