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Publications by S. H. Hsu
Improvement in Linearity of Novel InGaAsN-Based High Electron Mobility Transistors
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
Engineering
Astronomy
Physics
Related publications
Linearity Characteristics of Field-Plated AlGaN/GaN High Electron Mobility Transistors for Microwave Applications
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
Engineering
Astronomy
Physics
High Electron Mobility Transistors Yield Improvement With Ultrasonically Assisted Recess for High-Speed Integrated Circuits
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
Engineering
Astronomy
Physics
Excess Low-Frequency Noise in AlGaN/GaN-based High-Electron-Mobility Transistors
Applied Physics Letters
Astronomy
Physics
Studies of Traps in AlGaN/GaN High Electron Mobility Transistors on Silicon
InP and GaN High Electron Mobility Transistors for Millimeter-Wave Applications
IEICE Electronics Express
Electronic Engineering
Condensed Matter Physics
Optical
Electrical
Magnetic Materials
Electronic
InAs High-Electron Mobility Transistors on the Path to THz Operation
Prostate Specific Antigen Detection Using AlGaN∕GaN High Electron Mobility Transistors
Applied Physics Letters
Astronomy
Physics
Effect of Formal Passivations on Temperature-Dependent Characteristics of High Electron Mobility Transistors
Journal of the Electrochemical Society
Surfaces
Condensed Matter Physics
Optical
Electrochemistry
Sustainability
Materials Chemistry
Magnetic Materials
Renewable Energy
Films
Coatings
Electronic
the Environment
Ultrascaled InAlN/GaN High Electron Mobility Transistors With Cutoff Frequency of 400 GHz
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
Engineering
Astronomy
Physics
