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Publications by Sang Pil Yun

Degradation of Dc Characteristics of InAlN/GaN High Electron Mobility Transistors by 5 MeV Proton Irradiation

Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

Electronic Engineering

Condensed Matter Physics

Instrumentation

Materials Chemistry

Magnetic Materials

Process Chemistry

English

Related publications

Ultrascaled InAlN/GaN High Electron Mobility Transistors With Cutoff Frequency of 400 GHz

Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

English

Dual Barrier InAlN/AlGaN/GaN-on-silicon High-Electron-Mobility Transistors With Pt- And Ni-Based Gate Stacks

Physica Status Solidi (A) Applications and Materials Science

Electronic Engineering

Condensed Matter Physics

Materials Chemistry

Magnetic Materials

English

Linearity Characteristics of Field-Plated AlGaN/GaN High Electron Mobility Transistors for Microwave Applications

Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

English

InP and GaN High Electron Mobility Transistors for Millimeter-Wave Applications

IEICE Electronics Express

Electronic Engineering

Condensed Matter Physics

Magnetic Materials

English

Studies of Traps in AlGaN/GaN High Electron Mobility Transistors on Silicon

English

Prostate Specific Antigen Detection Using AlGaN∕GaN High Electron Mobility Transistors

Applied Physics Letters

English

Study of Deep Traps in AlGaN/GaN High-Electron Mobility Transistors by Electrical Characterization and Simulation

Journal of Applied Physics

English

Trap Behaviours Characterization of AlGaN/GaN High Electron Mobility Transistors by Room-Temperature Transient Capacitance Measurement

English

Excess Low-Frequency Noise in AlGaN/GaN-based High-Electron-Mobility Transistors

Applied Physics Letters

English