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Publications by T. Gougousi

AlN/GaN Insulated Gate HEMTs With HfO2 Gate Dielectric

Electronics Letters

Electronic Engineering

English

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Normally-Off P-GaN Gate InAlN/GaN HEMTs Grown on Silicon Substrates

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Surface Passivation of GaN and GaN/AlGaN Heterostructures by Dielectric Films and Its Application to Insulated-Gate Heterostructure Transistors

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Gate-Defined Quantum-Dot Devices Realized in InGaAs/InP by Incorporating a HfO2 Layer as Gate Dielectric

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Low Current Collapse and Low Leakage GaN MIS-HEMT Using AlN/SiN as Gate Dielectric and Passivation Layer

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The Characteristics of Fluorinated Gate Dielectric AlGaN/GaN MIS-HEMT

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The Characteristics of Hole Trapping in HfO2∕SiO2 Gate Dielectrics With TiN Gate Electrode

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60 Nm Self-Aligned-Gate InGaAs HEMTs With Record High-Frequency Characteristics

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Physics-Based Insulated-Gate Bipolar Transistor Model With Input Capacitance Correction

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