Amanote Research
Register
Sign In
Low Current Collapse and Low Leakage GaN MIS-HEMT Using AlN/SiN as Gate Dielectric and Passivation Layer
ECS Meeting Abstracts
doi 10.1149/ma2014-01/41/1530
Full Text
Open PDF
Abstract
Available in
full text
Date
January 1, 2014
Authors
Unknown
Publisher
The Electrochemical Society
Related search
The Characteristics of Fluorinated Gate Dielectric AlGaN/GaN MIS-HEMT
IEICE Electronics Express
Electronic Engineering
Condensed Matter Physics
Optical
Electrical
Magnetic Materials
Electronic
AlGaN/GaN MIS-HEMT Gate Structure Improvement Using Al2O3 Deposited by PEALD and BCl3 Gate Recess Etching
ECS Transactions
Engineering
AlN/GaN Insulated Gate HEMTs With HfO2 Gate Dielectric
Electronics Letters
Electronic Engineering
Electrical
Effects of P-GaN Capping Layer on the Current Collapse Behaviors in Normally-Off P-GaN Gate AlGaN/GaN HFETs
Surface Passivation of GaN and GaN/AlGaN Heterostructures by Dielectric Films and Its Application to Insulated-Gate Heterostructure Transistors
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
Current-Transport Mechanisms in the AlInN/AlN/GaN Single-Channel and AlInN/AlN/GaN/AlN/GaN Double-Channel Heterostructures
Thin Solid Films
Surfaces
Alloys
Optical
Interfaces
Metals
Materials Chemistry
Magnetic Materials
Films
Coatings
Electronic
The Research of Low-Noise Gan Hemt of Cryogenic Temperatures
National Association of Scientists
Comparison of Low-Temperature GaN, SiO2, and SiNx as Gate Insulators on AlGaN∕GaN Heterostructure Field-Effect Transistors
Journal of Applied Physics
Astronomy
Physics
Electrical Characterization of MS and MIS Structures on AlGaN/AlN/GaN Heterostructures
Microelectronics Reliability
Surfaces
Electronic Engineering
Condensed Matter Physics
Electronic
Molecular Physics,
Nanoscience
Films
Optical
Electrical
Atomic
Magnetic Materials
Nanotechnology
Reliability
Safety
Coatings
Optics
Quality
Risk