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Publications by Takayuki Aoyama
Threshold Voltage Instability of 45-Nm-Node Poly-Si- Or FUSI-Gated SRAM Transistors Caused by Dopant Lateral Diffusion in Poly-Si
Comprehensive Understanding of PBTI and NBTI Reliability of High-K / Metal Gate Stacks With EOT Scaling to Sub-1nm
Related publications
Operations of Poly-Si Nanowire Thin-Film Transistors With a Multiple-Gated Configuration
Nanotechnology
Mechanics of Materials
Electronic Engineering
Mechanical Engineering
Materials Science
Nanoscience
Electrical
Bioengineering
Nanotechnology
Chemistry
Poly-Si Thin-Film Transistors Crystallized by Electron-Beam Annealing
Journal of the Electrochemical Society
Surfaces
Condensed Matter Physics
Optical
Electrochemistry
Sustainability
Materials Chemistry
Magnetic Materials
Renewable Energy
Films
Coatings
Electronic
the Environment
Structural Characterization of Poly-Si Films Crystallized by Ni Metal Induced Lateral Crystallization
Scientific Reports
Multidisciplinary
Combined Negative Bias Temperature Instability and Hot Carrier Stress Effects in Low Temperature Poly-Si Thin Film Transistors
Improvement in the Asymmetric VFB Shift of Poly-Si/HfSiON/Si by Inserting Oxygen Diffusion Barrier Layers Into the Interfaces
On-Current Modeling of Poly-Si TFT
Stability Analysis of Sub-Threshold 6T SRAM Cell at 45 Nm for IoT Application
International Journal of Recent Technology and Engineering
Engineering
Management of Technology
Innovation
Laser Irradiated Sputter-Deposited Poly-Si TFTs
IEEJ Transactions on Fundamentals and Materials
Electronic Engineering
Electrical
Thickness Dependence of Microstructure of Laterally Crystallized Poly-Si Thin Films and Electrical Characteristics of Low-Temperature Poly-Si TFTs
Journal of the Electrochemical Society
Surfaces
Condensed Matter Physics
Optical
Electrochemistry
Sustainability
Materials Chemistry
Magnetic Materials
Renewable Energy
Films
Coatings
Electronic
the Environment