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Publications by Toshifumi Imajo
High Hole Mobility (≥500 Cm2 V−1 S−1) Polycrystalline Ge Films on GeO2-coated Glass and Plastic Substrates
Applied Physics Express
Engineering
Astronomy
Physics
Related publications
Retraction: “Nucleation-Controlled Low-Temperature Solid-Phase Crystallization for Sn-Doped Polycrystalline-Ge Film on Insulator With High Carrier Mobility (∼550 Cm2/v S)” [Appl. Phys. Lett. 112, 242103 (2018)]
Applied Physics Letters
Astronomy
Physics
Theory of Hole Mobility in Strained Ge and III-V P-Channel Inversion Layers With High-Κ Insulators
Journal of Applied Physics
Astronomy
Physics
Comparison on the Structure and Exchange Bias in Co/MnPt and MnPt/Co Polycrystalline Films on Glass Substrates
AIP Advances
Nanotechnology
Astronomy
Physics
Nanoscience
Preparation of Polycrystalline VO2 Films on Glass and TiO2/glass Substrates by Means of Excimer Laser Assisted Metal Organic Deposition
Journal of the Ceramic Society of Japan
Materials Chemistry
Chemistry
Condensed Matter Physics
Composites
Ceramics
Low Temperature Electron Mobility Exceeding 104 Cm2/v S in MOCVD Grown Β-Ga2O3
APL Materials
Materials Science
Engineering
Improving Carrier Mobility of Polycrystalline Ge by Sn Doping
Scientific Reports
Multidisciplinary
Fabrication of Large-Grain Polycrystalline Ge Films Using Absorptive Films
Applied Physics B: Lasers and Optics
Astronomy
Physics
Chemical Composition of High-T\(_{c} \Text{ Ge}_{1 - X}\text{Mn}_{x}\) Nanocolumns Grown on \(\Text{Ge}(001)\) Substrates
Communications in Physics
Stress and Adhesion of CVD Grown Polycrystalline 3C–SiC Films on Silicon Substrates
Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering
