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Publications by Veit Hoffmann
Temperature-Dependent Charge Carrier Diffusion in [0001¯] Direction of GaN Determined by Luminescence Evaluation of Buried InGaN Quantum Wells
Physica Status Solidi (B): Basic Research
Optical
Electronic
Condensed Matter Physics
Magnetic Materials
Related publications
Dependence of Carrier Localization in InGaN∕GaN Multiple-Quantum Wells on Well Thickness
Applied Physics Letters
Astronomy
Physics
Band Structure of Interdiffused InGaN/GaN Quantum Wells
Evidence of Nanoscale Anderson Localization Induced by Intrinsic Compositional Disorder in InGaN/GaN Quantum Wells by Scanning Tunneling Luminescence Spectroscopy
Physical Review B
Optical
Electronic
Condensed Matter Physics
Magnetic Materials
Calculation of Electric Field and Optical Transitions in InGaN∕GaN Quantum Wells
Journal of Applied Physics
Astronomy
Physics
Polariton Lasing in InGaN Quantum Wells at Room Temperature
Opto-Electronic Advances
Ambipolar Carrier Diffusion in In0.53Ga0.47As Single Quantum Wells
Brazilian Journal of Physics
Astronomy
Physics
Room Temperature Luminescence of Passivated InGaN Quantum Dots Formed by Quantum-Sized-Controlled Photoelectrochemical Etching
Applied Physics Letters
Astronomy
Physics
Comparison of Electrostatic and Localized Plasmon Induced Light Enhancement in Hybrid InGaN/GaN Quantum Wells
Applied Physics Letters
Astronomy
Physics
Optical and Microstructural Studies of Atomically Flat Ultrathin In-Rich InGaN∕GaN Multiple Quantum Wells
Journal of Applied Physics
Astronomy
Physics
