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Publications by Wanling Deng
A Surface-Potential-Based Analytical I-V Model of Full-Depletion Single-Gate SOI MOSFETs
Electronics (Switzerland)
Control
Electronic Engineering
Signal Processing
Computer Networks
Systems Engineering
Hardware
Communications
Electrical
Architecture
Related publications
Analytical Temperature-Rise Model for SOI MOSFETs
A Two-Dimensional Analytical Model of Fully Depleted Asymmetrical Dual Material Gate Double-Gate Strained-Si MOSFETs
Journal of Semiconductors
Electronic Engineering
Condensed Matter Physics
Materials Chemistry
Optical
Electrical
Magnetic Materials
Electronic
Sub-40 Nm SOI V-Groove N-MOSFETs
IEEE Electron Device Letters
Electronic Engineering
Optical
Electrical
Magnetic Materials
Electronic
Performance Evaluation of FD-SOI MOSFETS for Different Metal Gate Work Function
International Journal of VLSI Design & Communication Systems
I–V Curve Hysteresis Induced by Gate-Free Charging of GaAs Nanowires' Surface Oxide
Applied Physics Letters
Astronomy
Physics
6-T SRAM Cell Design With Nanoscale Double-Gate SOI MOSFETs: Impact of Source/Drain Engineering and Circuit Topology
Semiconductor Science and Technology
Electronic Engineering
Condensed Matter Physics
Optical
Materials Chemistry
Electrical
Magnetic Materials
Electronic
Model and Analysis of Gate Leakage Current in Ultrathin Nitrided Oxide MOSFETs
IEEE Transactions on Electron Devices
Electronic Engineering
Optical
Electrical
Magnetic Materials
Electronic
Sub-Micron, Metal Gate, High-к Dielectric, Implant-Free, Enhancement-Mode III-V Mosfets
Mobility Enhancement of SOI MOSFETs Due to Subband Modulation in Ultra-Thin SOI Films
