The Gate Length Reducing Process for Pseudomorphic In0.52Al0.48As/In0.7Ga0.3As HEMTs

doi 10.7567/ssdm.2006.e-1-6
Full Text
Abstract

Available in full text

Date
Authors
Publisher

The Japan Society of Applied Physics

Related search

AlN/GaN Insulated Gate HEMTs With HfO2 Gate Dielectric

Electronics Letters
Electronic EngineeringElectrical
2009English

Novel Gate-Recess Process for the Reduction of Parasitic Phenomena Due to Side-Etching in InAlAs/InGaAs HEMTs

1997English

Reducing the Length of Clinic Visits: A Process Analysis Case Report

International Journal of Health Planning and Management
MedicineHealth Policy
2019English

Normally-Off P-GaN Gate InAlN/GaN HEMTs Grown on Silicon Substrates

2019English

60 Nm Self-Aligned-Gate InGaAs HEMTs With Record High-Frequency Characteristics

2010English

Physical Investigation of Gate Capacitance in In0.53Ga0.47As/In0.52Al0.48As Quantum-Well Metal-Oxide-Semiconductor Field-Effect-Transistors

AIP Advances
NanotechnologyAstronomyPhysicsNanoscience
2018English

Gate Replacement Technique for Reducing Leakage Current in Wallace Tree Multiplier

Journal of Computer Science
Computer NetworksSoftwareArtificial IntelligenceCommunications
2013English

Gate Length Variation Effect on Performance of Gate-First Self-Aligned In0.53Ga0.47As MOSFET

PLoS ONE
Multidisciplinary
2013English

TRIZ-assisted Stage-Gate Process for Developing New Products

Journal of Finance and Economics
2014English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2024 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy