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A Novel Cell Structure With Bit Line Cap Spacer (BCS) and Top Enlarged Storage Node Contact (TESC) for 90 Nm DRAM Technology and Beyond
doi 10.7567/ssdm.2004.b-9-1
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Date
January 1, 2004
Authors
C.J. Yun
Y.K. Park
J.W. Lee
D.I. Bae
S.B. Kim
S.H. Shin
J.G. Lee
S.H. Lee
D.J. Lee
E.C. Lee
B.H. Roh
I.H. Nam
T.Y. Chung
Publisher
The Japan Society of Applied Physics
