Amanote Research

Amanote Research

    RegisterSign In

Metal Containing Resist Readiness for HVM EUV Lithography

Journal of Photopolymer Science and Technology - Japan
doi 10.2494/photopolymer.29.501
Full Text
Open PDF
Abstract

Available in full text

Categories
Organic ChemistryPolymersMaterials ChemistryPlastics
Date

January 1, 2016

Authors
Danilo De SimoneMing MaoFrederic LazzarinoGeert Vandenberghe
Publisher

Technical Association of Photopolymers, Japan


Related search

Evaluation of Resist Capability for EUV Lithography

Journal of Photopolymer Science and Technology
Organic ChemistryPolymersMaterials ChemistryPlastics
2006English

Evaluation of EUV Resist Performance Using Interference Lithography

2015English

EUV Lithography

Synchrotron Radiation News
High Energy PhysicsNuclearOpticsAtomicMolecular Physics,
2019English

Chemically Amplified Silicon Containing Resist for ArF Excimer Laser Lithography.

Journal of Photopolymer Science and Technology
Organic ChemistryPolymersMaterials ChemistryPlastics
1997English

Metallic Resist for Phase-Change Lithography

Scientific Reports
Multidisciplinary
2014English

EUV Light Sources for Next-Gen Lithography

Optics and Photonics News
Electronic EngineeringCondensed Matter PhysicsElectronicMolecular Physics,OpticalElectricalAtomicMagnetic MaterialsOptics
2018English

Progress in EUV Resists Towards High-Na EUV Lithography

2019English

High-Sensitivity Molecular Organometallic Resist for EUV (MORE)

2015English

Approach to EUV Lithography Simulation

2011English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2025 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy