Characterization of Strain in Si for High Performance MOSFETs

doi 10.7567/ssdm.2007.p-2-7
Full Text
Abstract

Available in full text

Date
Authors
Publisher

The Japan Society of Applied Physics

Related search

Noise in Si and SiGe MOSFETs With High-K Gate Dielectrics

AIP Conference Proceedings
AstronomyPhysics
2005English

High Performance, Strained-Ge, Heterostructure P-MOSFETs

English

A High-Frequency Transconductance Method for Characterization of High- $\Kappa$ Border Traps in III-V MOSFETs

IEEE Transactions on Electron Devices
Electronic EngineeringOpticalElectricalMagnetic MaterialsElectronic
2013English

Two-Dimensional Carrier Transport in Si MOSFETs

VLSI Design
Electronic EngineeringComputer GraphicsHardwareElectricalArchitectureComputer-Aided Design
1998English

Effective Schottky Barrier Lowering of Ni Silicide/P-Si(100) Using an Ytterbium Confinement Structure for High Performance N-Type MOSFETs

Materials and Design
Mechanics of MaterialsMaterials ScienceMechanical Engineering
2017English

High-Performance Si Microwire Photovoltaics

Energy and Environmental Sciences
SustainabilityRenewable EnergyNuclear EnergyEnvironmental ChemistryEngineeringthe EnvironmentPollution
2011English

Vertical InAs/InGaAs Heterostructure MOSFETs on Si

Nano Letters
Materials ScienceCondensed Matter PhysicsMechanical EngineeringNanoscienceBioengineeringNanotechnologyChemistry
2017English

Cryogenic Characterization of Commercial SiC Power MOSFETs

Materials Science Forum
2015English

Back-Gated Buried Oxide MOSFETs in a High-Voltage Bipolar Technology for Bonded Oxide/Soi Interface Characterization

IEEE Electron Device Letters
Electronic EngineeringOpticalElectricalMagnetic MaterialsElectronic
1998English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2024 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy