Reduction of Interface State Density at SiO2 /InAlN Interface by Inserting Ultrathin Al2 O3 and Plasma Oxide Interlayers

Physica Status Solidi (B): Basic Research - United Kingdom
doi 10.1002/pssb.201600691
Full Text
Abstract

Available in full text

Date
Authors
Publisher

Wiley

Related search

Effect of Insertion of Ultrathin Al2 O3 Interlayer at Metal/GaN Interfaces

Physica Status Solidi (B): Basic Research
OpticalElectronicCondensed Matter PhysicsMagnetic Materials
2017English

Mechanical Stability of Ultrathin Ge∕Si Film on SiO2: The Effect of Si∕SiO2 Interface

Journal of Applied Physics
AstronomyPhysics
2005English

Interface-Dependence of Nucleation and Self-Assembly of Ultrathin Iron Oxide Films

Materials Research Society Symposium - Proceedings
Mechanics of MaterialsMaterials ScienceCondensed Matter PhysicsMechanical Engineering
2003English

Study of SiO2/Si Interface by Surface Techniques

2011English

Surface State Capture Cross-Section at the Interface Between Silicon and Hafnium Oxide

Advances in Materials Science and Engineering
Materials ScienceEngineering
2013English

Interface Engineered Room‐Temperature Ferromagnetic Insulating State in Ultrathin Manganite Films

Advanced Science
Materials ScienceGeneticsMolecular BiologyBiochemistryEngineeringChemical EngineeringMedicineAstronomyPhysics
2019English

Study of High Temperature Reaction Between Ti and SiO2 at Interface in Ti/SiO2/TiSi2/Si System by XPS.

SHINKU
1986English

Depth-Dependent Spectroscopic Defect Characterization of the Interface Between Plasma-Deposited SiO2 and Silicon

Applied Physics Letters
AstronomyPhysics
1998English

Structures and Electronic States of Si/SiO2 Interface.

Hyomen Kagaku
1999English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2024 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy