Failure Analysis Using IDD Current Leakage and Photo Localization for Gate Oxide Defect of CMOS VLSI

doi 10.1109/scored.2010.5704033
Full Text
Abstract

Available in full text

Date
Authors
Publisher

IEEE

Related search

Impact of Gate Induced Drain Leakage on Overall Leakage of Submicrometer CMOS VLSI Circuits

IEEE Transactions on Semiconductor Manufacturing
Electronic EngineeringIndustrialCondensed Matter PhysicsManufacturing EngineeringOpticalElectricalMagnetic MaterialsElectronic
2002English

Runtime Mechanisms for Leakage Current Reduction in CMOS VLSI Circuits

English

Model and Analysis of Gate Leakage Current in Ultrathin Nitrided Oxide MOSFETs

IEEE Transactions on Electron Devices
Electronic EngineeringOpticalElectricalMagnetic MaterialsElectronic
2002English

Simultaneous Control of Subthreshold and Gate Leakage Current in Nanometer-Scale CMOS Circuits

2007English

Design Techniques for Gate-Leakage Reduction in CMOS Circuits

English

Correlation Between Hot Carrier Stress, Oxide Breakdown and Gate Leakage Current for Monitoring Plasma Processing Induced Damage on Gate Oxide

English

Gate Oxide Reliability and Deuterated Cmos Processing

English

An Algorithm for Leakage Power Reduction Through IVC in CMOS VLSI Digital Circuits

International Journal of Computer Applications
2014English

Leakage Current in Deep-Submicron Cmos Circuits

Journal of Circuits, Systems and Computers
HardwareElectronic EngineeringElectricalArchitecture
2002English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2024 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy