Amanote Research
Register
Sign In
Comparison of Si, GaAs, SiC and GaN FET-type Switches for Pulsed Power Applications
doi 10.1109/ppc.2003.1277729
Full Text
Open PDF
Abstract
Available in
full text
Date
Unknown
Authors
C.W. Myles
M.A. Gundersen
Publisher
IEEE
Related search
GaN Power Electronics and Applications
Cryogenic GaAs-FET Amplifiers for SQUIDS
Journal of Low Temperature Physics
Materials Science
Condensed Matter Physics
Optics
Atomic
Molecular Physics,
FET Q Switch for Pulsed NMR
Review of Scientific Instruments
Medicine
Instrumentation
Design & Optimization of Gate-All-Around Tunnel FET for Low Power Applications
International Journal of Engineering and Technology(UAE)
Architecture
Hardware
Engineering
Chemical Engineering
Biotechnology
Environmental Engineering
Computer Science
Broadband GaAs MESFET and GaN HEMT Resistive Feedback Power Amplifiers
IEEE Journal of Solid-State Circuits
Electronic Engineering
Electrical
Characteristics of Unintentionally Doped and Lightly Si-Doped GaN Prepared via Pulsed Sputtering
AIP Advances
Nanotechnology
Astronomy
Physics
Nanoscience
Метод Управления Полярностью Слоев GaN При Эпитаксиальном Синтезе GaN/AlN Гетероструктур На Гибридных Подложках SiC/Si
Журнал технической физики
C-V Profiling of GaAs FET Films
IEEE Transactions on Electron Devices
Electronic Engineering
Optical
Electrical
Magnetic Materials
Electronic
Femtosecond Pulsed Laser Ablation and Patterning of 3c-SiC Films on Si Substrates for MEMS Fabrication