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Publications by A. Parashar
Effect of Hydrogen Content and Bonding Environment on Mechanical Properties of Hydrogenated Silicon Films Deposited by High-Frequency PECVD Process
ISRN Nanomaterials
BldG and SCO3548 Interact Antagonistically to Control Key Developmental Processes in Streptomyces Coelicolor
Journal of Bacteriology
Microbiology
Molecular Biology
Related publications
Investigation of Optical Properties of Silicon Oxynitride Films Deposited by RF PECVD Method
Materials Science-Poland
Mechanics of Materials
Materials Science
Condensed Matter Physics
Mechanical Engineering
Electrical Properties and Degradation Kinetics of Compensated Hydrogenated Microcrystalline Silicon Deposited by Very High‐frequency‐glow Discharge
Journal of Applied Physics
Astronomy
Physics
Effect of Ion Bombardment on the Chemical and the Mechanical Properties of Silicon-Nitride Thin Films Deposited by Using PECVD With SiH4/NH3/Ar Gases at Low Temperature
Journal of the Korean Physical Society
Astronomy
Physics
Properties of Silicon Dioxide Film Deposited by PECVD at Low Temperature/Pressure
Metallurgical and Materials Engineering
Alloys
Metals
Mechanical Engineering
Corrosion Protection and Mechanical Performance of SiO2 Films Deposited via PECVD on OT59 Brass
Anti-Corrosion Methods and Materials
Materials Science
Chemical Engineering
Effects of Pore on Dielectric Constants of Films Deposited by PECVD
Hydrogen-Doped High Conductivity ZnO Films Deposited by Radio-Frequency Magnetron Sputtering
Applied Physics Letters
Astronomy
Physics
Highly Conductive P-Type Nanocrystalline Silicon Films Deposited by RF-PECVD Using Silane and Trimethylboron Mixtures at High Pressure
Vacuum
Surfaces
Instrumentation
Coatings
Condensed Matter Physics
Films
Properties of Ultra Fast Deposited Diamond-Like Hydrogenated Carbon Films
Acta Physica Polonica A
Astronomy
Physics
