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Publications by Abirami Sivananthan

Formation of InGaAs Fins by Atomic Layer Epitaxy on InP Sidewalls

Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
EngineeringAstronomyPhysics
2014English

Related publications

Surface Smoothing of GaAs Microstructure by Atomic Layer Epitaxy

Applied Physics Letters
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1999English

Atomic Layer Epitaxy of IV Group Semiconductors.

Hyomen Kagaku
1991English

Study on Property of Atomic Layer Epitaxy Growth of InN by Using Indium Chloride

Journal of Advanced Science
1992English

Atomic Layer-By-Layer Epitaxy of Silicon and Germanium Using Flash Heating in CVD

Le Journal de Physique IV
1995English

Growth of GaInTlAs Layers on InP by Molecular Beam Epitaxy

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
SurfacesFilmsInterfacesCondensed Matter PhysicsCoatings
2001English

Hexagonal Ferromagnetic MnAs Nanocluster Formation on GaInAs∕InP (111)B Layers by Metal-Organic Vapor Phase Epitaxy

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2006English

Trap-Free Heterostructure of PbS Nanoplatelets on InP(001) by Chemical Epitaxy

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Atomic Imaging of Atomic Layer Deposition Oxide Nucleation With Trimethylaluminum on As-Rich InGaAs(001) 2 × 4 vs Ga/in-Rich InGaAs(001) 4 × 2

Journal of Chemical Physics
MedicineTheoretical ChemistryAstronomyPhysicsPhysical
2012English

InAlAs/InGaAs/InP Sub-Micron HEMTs Grown by CBE

Journal of Crystal Growth
Inorganic ChemistryMaterials ChemistryCondensed Matter Physics
1992English

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