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Publications by C.-M. Kuo

Oxide-Nitride Storage Dielectric Formation in a Single-Furnace Process for Trench DRAM

IEEE Electron Device Letters

Electronic Engineering

Magnetic Materials

English

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A Single Beam Data Writing Process for Holographic Data Storage.

English

Boron Nitride for Hydrogen Storage

English

Implementation of Electrochemical Methods for Metrology and Analysis of Nano Electronic Structures of Deep Trench DRAM

Journal of Semiconductor Technology and Science

Electronic Engineering

Magnetic Materials

English

Formation of Silicon Germanium Nitride Layer With Distributed Charge Storage Elements

Applied Physics Letters

English

A Study of a Data Retention Characteristic for Various Schemes of Gate Oxide Formation in Sub-50-Nm Saddle-Fin Transistor DRAM Technology

English

Various Methods to Reduce Defect States in Tantalum Oxide Capacitors for DRAM Applications

Materials Research Society Symposium - Proceedings

Mechanics of Materials

Materials Science

Condensed Matter Physics

Mechanical Engineering

English

Dual-Operating-Voltage Scheme for a Single 5-V 16-Mbit DRAM

IEEE Journal of Solid-State Circuits

Electronic Engineering

English

Investigation of Interlayer Dielectric Material Influence on DRAM Retention Time

English

Phonon-Coupled Trap-Assisted Charge Injection in Metal-Nitride-Oxide-Silicon/Silicon-Oxide-Nitride-Oxide-Silicon Structures

Journal of Applied Physics

English