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Publications by Che-Yang Chiang

InAs Thin-Channel High-Electron-Mobility Transistors With Very High Current-Gain Cutoff Frequency for Emerging Submillimeter-Wave Applications

Applied Physics Express

English

Bias-Dependent Radio Frequency Performance for 40 Nm InAs High-Electron-Mobility Transistor With a Cutoff Frequency Higher Than 600 GHz

Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

English

Related publications

InAs-Channel High-Electron-Mobility Transistors for Ultralow-Power Low Noise Amplifier Applications

Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

English

Ultrascaled InAlN/GaN High Electron Mobility Transistors With Cutoff Frequency of 400 GHz

Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

English

InP and GaN High Electron Mobility Transistors for Millimeter-Wave Applications

IEICE Electronics Express

Electronic Engineering

Condensed Matter Physics

Magnetic Materials

English

InAs High-Electron Mobility Transistors on the Path to THz Operation

English

Monte Carlo Analysis of Impact Ionization in Isolated-Gate InAs/AlSb High Electron Mobility Transistors

Acta Physica Polonica A

English

Excess Low-Frequency Noise in AlGaN/GaN-based High-Electron-Mobility Transistors

Applied Physics Letters

English

Linearity Characteristics of Field-Plated AlGaN/GaN High Electron Mobility Transistors for Microwave Applications

Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

English

High Electron Mobility Transistors Yield Improvement With Ultrasonically Assisted Recess for High-Speed Integrated Circuits

Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

English