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Publications by Cheng-Ying Huang
Formation of InGaAs Fins by Atomic Layer Epitaxy on InP Sidewalls
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
Engineering
Astronomy
Physics
Related publications
Surface Smoothing of GaAs Microstructure by Atomic Layer Epitaxy
Applied Physics Letters
Astronomy
Physics
Atomic Layer Epitaxy of IV Group Semiconductors.
Hyomen Kagaku
Study on Property of Atomic Layer Epitaxy Growth of InN by Using Indium Chloride
Journal of Advanced Science
Atomic Layer-By-Layer Epitaxy of Silicon and Germanium Using Flash Heating in CVD
Le Journal de Physique IV
Growth of GaInTlAs Layers on InP by Molecular Beam Epitaxy
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Surfaces
Films
Interfaces
Condensed Matter Physics
Coatings
Hexagonal Ferromagnetic MnAs Nanocluster Formation on GaInAs∕InP (111)B Layers by Metal-Organic Vapor Phase Epitaxy
Applied Physics Letters
Astronomy
Physics
Trap-Free Heterostructure of PbS Nanoplatelets on InP(001) by Chemical Epitaxy
Atomic Imaging of Atomic Layer Deposition Oxide Nucleation With Trimethylaluminum on As-Rich InGaAs(001) 2 × 4 vs Ga/in-Rich InGaAs(001) 4 × 2
Journal of Chemical Physics
Medicine
Theoretical Chemistry
Astronomy
Physics
Physical
InAlAs/InGaAs/InP Sub-Micron HEMTs Grown by CBE
Journal of Crystal Growth
Inorganic Chemistry
Materials Chemistry
Condensed Matter Physics