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Publications by E. Memisevic
Vertical InAs/GaAsSb/GaSb Tunneling Field-Effect Transistor on Si With S = 48 mV/decade and Ion = 10 μA/μm for Ioff = 1 nA/μm at VDS = 0.3 V
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Scaling of Vertical InAs–GaSb Nanowire Tunneling Field-Effect Transistors on Si
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Vertical InAs Nanowire MOSFETs With IDS = 1.34 mA/µm and Gm = 1.19 mS/µm at VDS = 0.5 V
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Effect of Si-Induced Defects on 1 Μm Absorption Losses in Laser-Grade YAG Ceramics
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