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Publications by Elias B Saion
Electrical Property Comparison and Charge Transmission in P-Type Double Gate and Single Gate Junctionless Accumulation Transistor Fabricated by AFM Nanolithography
Nanoscale Research Letters
Materials Science
Nanotechnology
Condensed Matter Physics
Nanoscience
Related publications
Modeling Nanowire and Double-Gate Junctionless Field-Effect Transistors
Design Consideration and Impact of Gate Length Variation on Junctionless Strained Double Gate MOSFET
International Journal of Recent Technology and Engineering
Engineering
Management of Technology
Innovation
Advanced Depleted-Substrate Transistors: Single-Gate, Double-Gate and Tri-Gate
Molecular Floating-Gate Single-Electron Transistor
Scientific Reports
Multidisciplinary
Study the Characteristic of P-Type Junction-Less Side Gate Silicon Nanowire Transistor Fabricated by Atomic Force Microscopy Lithography
American Journal of Applied Sciences
Multidisciplinary
Floating Back-Gate Field Effect Transistor Fabricated Using a Single Nanowire of Charge Transfer Complex as a Channel
Investigation of Gate-Induced Drain Leakage (GIDL) Current in Thin Body Devices: Single-Gate Ultra-Thin Body, Symmetrical Double-Gate, and Asymmetrical Double-Gate MOSFETs
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
Engineering
Astronomy
Physics
Improvement of Electrical Performance in Heterostructure Junctionless TFET Based on Dual Material Gate
Applied Sciences (Switzerland)
Instrumentation
Materials Science
Fluid Flow
Engineering
Computer Science Applications
Process Chemistry
Transfer Processes
Technology
Gate Level Transistor Sizing by Nonlinear Optimization.
