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Publications by Emil Spahn
Influence of Different Peripheral Protections on the Breakover Voltage of a 4h-SiC GTO Thyristor
Materials Science Forum
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Forward Voltage Degradation of 4h-SiC Pin Diodes and High Voltage 4h-SiC Pin Diodes on the (000-1) C-Face With Reduced Forward Degradation
IEEJ Transactions on Industry Applications
Electronic Engineering
Industrial
Electrical
Manufacturing Engineering
Modelling and Simulation of 6 Pulse GTO Thyristor Converter
GTO Thyristor and Bipolar Transistor Cascode Switches
IEE Proceedings B Electric Power Applications
Wide Temperature Range Integrated Bandgap Voltage References in 4H–SiC
IEEE Electron Device Letters
Electronic Engineering
Optical
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Magnetic Materials
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On the Site Occupancy of Dopants in 4h-SiC
Microscopy and Microanalysis
Instrumentation
Investigation of Regulation Properties and Influence of the Reactor-Thyristor Device on the Network on the High-Voltage Side of the Furnace Transformer
Electrotechnical Systems and Complexes
Investigation on the Mechanisms of Nitrogen Shallow Implantation Influence on Trap Properties of SiO2/n-Type 4h-SiC Interface
Acta Physica Polonica A
Astronomy
Physics
Channel Width Effect on the Operation of 4h-SiC Vertical JFETs
Physica Status Solidi (A) Applications and Materials Science
Surfaces
Electronic Engineering
Condensed Matter Physics
Materials Chemistry
Optical
Electrical
Magnetic Materials
Films
Coatings
Electronic
Interfaces
Microscopic Raman Mapping of Epitaxial Graphene on 4h-SiC(0001)
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
Engineering
Astronomy
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