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Publications by G. Bosman
Model and Analysis of Gate Leakage Current in Ultrathin Nitrided Oxide MOSFETs
IEEE Transactions on Electron Devices
Electronic Engineering
Optical
Electrical
Magnetic Materials
Electronic
Related publications
Threshold-Voltage Instability in 4h-SiC MOSFETs With Nitrided Gate Oxide Revealed by Non-Relaxation Method
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
Engineering
Astronomy
Physics
Investigation of Gate-Induced Drain Leakage (GIDL) Current in Thin Body Devices: Single-Gate Ultra-Thin Body, Symmetrical Double-Gate, and Asymmetrical Double-Gate MOSFETs
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
Engineering
Astronomy
Physics
Failure Analysis Using IDD Current Leakage and Photo Localization for Gate Oxide Defect of CMOS VLSI
Correlation Between Hot Carrier Stress, Oxide Breakdown and Gate Leakage Current for Monitoring Plasma Processing Induced Damage on Gate Oxide
Multi-Technology Measurements of Nitrided Oxide and High-K Gate Stacks
AIP Conference Proceedings
Astronomy
Physics
Effect of Polysilicon Depletion Charge on Electron Mobility in Ultrathin Oxide MOSFETs
Semiconductor Science and Technology
Electronic Engineering
Condensed Matter Physics
Optical
Materials Chemistry
Electrical
Magnetic Materials
Electronic
Low Power Current-Mode Threshold Logic Gate Using Nano-Technology Double-Gate MOSFETs
The International Conference on Electrical Engineering
The Effects of Nitridation and Re-Oxidation on Drain Leakage Current in N-Channel MOSFETs
Evidence of Hole Direct Tunneling Through Ultrathin Gate Oxide Using P/Sup +/ Poly-SiGe Gate
IEEE Electron Device Letters
Electronic Engineering
Optical
Electrical
Magnetic Materials
Electronic
