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Publications by G. Le Carval
Analytical Modelling and Performance Analysis of Double-Gate MOSFET-based Circuit Including Ballistic/Quasi-Ballistic Effects
Molecular Simulation
Materials Science
Information Systems
Condensed Matter Physics
Simulation
Chemical Engineering
Modeling
Chemistry
Related publications
Double-Gate MOSFET Based Reconfigurable Cells
Electronics Letters
Electronic Engineering
Electrical
Technology Oriented Analytical Models of MOSFETs in the Quasi Ballistic Regime
ANALYTICAL MODELS AND ELECTRICAL CHARACTERISATION OF ADVANCED MOSFETs IN THE QUASI BALLISTIC REGIME
International Journal of High Speed Electronics and Systems
Electronic Engineering
Hardware
Optical
Electrical
Architecture
Magnetic Materials
Electronic
Quasi-Ballistic Electron Transport in Atomic Wires
An Analytical Model for Ballistic Diode Based on Asymmetric Geometry
Journal of Applied Physics
Astronomy
Physics
Ballistic Transport in Gate-All-Around Nanowire Transistors
The International Conference on Electrical Engineering
Effects of Depleted Poly-Si Gate on MOSFET Performance
Design of Booth Multiplier Using Double Gate MOSFET
International Journal of Computer Applications
Force-Time Differences Between Ballistic and Non-Ballistic Half-Squats
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