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Publications by Georges Bremond
Study of Deep Traps in AlGaN/GaN High-Electron Mobility Transistors by Electrical Characterization and Simulation
Journal of Applied Physics
Astronomy
Physics
Absolute Photoionization Cross Sections of the Acceptor State Level of Chromium in Indium Phosphide
Materials Research Society Symposium - Proceedings
Mechanics of Materials
Materials Science
Condensed Matter Physics
Mechanical Engineering
Related publications
Studies of Traps in AlGaN/GaN High Electron Mobility Transistors on Silicon
Simulation Study on Electrical Characteristic of AlGaN/GaN High Electron Mobility Transistors With AlN Spacer Layer
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
Engineering
Astronomy
Physics
Fast Electrical Detection of Hg(II) Ions With AlGaN∕GaN High Electron Mobility Transistors
Applied Physics Letters
Astronomy
Physics
Trap Behaviours Characterization of AlGaN/GaN High Electron Mobility Transistors by Room-Temperature Transient Capacitance Measurement
AIP Advances
Nanotechnology
Astronomy
Physics
Nanoscience
Study of Gate Oxide Traps in HfO2/AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistors by Use of Ac Transconductance Method
Applied Physics Letters
Astronomy
Physics
Prostate Specific Antigen Detection Using AlGaN∕GaN High Electron Mobility Transistors
Applied Physics Letters
Astronomy
Physics
Excess Low-Frequency Noise in AlGaN/GaN-based High-Electron-Mobility Transistors
Applied Physics Letters
Astronomy
Physics
Dopant-Free GaN/AlN/AlGaN Radial Nanowire Heterostructures as High Electron Mobility Transistors
Linearity Characteristics of Field-Plated AlGaN/GaN High Electron Mobility Transistors for Microwave Applications
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
Engineering
Astronomy
Physics
