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Publications by Henrik Sjoland
Vertical InAs Nanowire MOSFETs With IDS = 1.34 mA/µm and Gm = 1.19 mS/µm at VDS = 0.5 V
Related publications
InGaAs Nanowire MOSFETs With ION = 555 µA/µm at IOFF = 100 nA/µm and VDD = 0.5 V
A Reconfigurable Medically Cohesive Biomedical Front-End With ΣΔ ADC in 0.18µm CMOS
Quadrature Sampling Mixer Topology for SAW-Less GPS Receivers in 0.18µm CMOS
A 1–5 GHz UWB Low Noise Amplifier in 0.18 µm CMOS
Vertical InAs/InGaAs Heterostructure MOSFETs on Si
Nano Letters
Materials Science
Condensed Matter Physics
Mechanical Engineering
Nanoscience
Bioengineering
Nanotechnology
Chemistry
Low-Frequency Noise in III-V Nanowire TFETs and MOSFETs
IEEE Electron Device Letters
Electronic Engineering
Optical
Electrical
Magnetic Materials
Electronic
Vertical InAs/GaAsSb/GaSb Tunneling Field-Effect Transistor on Si With S = 48 mV/decade and Ion = 10 μA/μm for Ioff = 1 nA/μm at VDS = 0.3 V
Semiconductor Nanowire MOSFETs and Applications
M. E. V. S. M. E.
Nippon Kinzoku Gakkaishi/Journal of the Japan Institute of Metals
Mechanics of Materials
Alloys
Materials Chemistry
Condensed Matter Physics
Metals
