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Publications by Hidekazu Tsuchida

Photoluminescence Imaging and Wavelength Analysis of Basal Plane Frank-Type Defects in 4h-SiC Epilayers

Materials Science Forum

English

Forward Voltage Degradation of 4h-SiC Pin Diodes and High Voltage 4h-SiC Pin Diodes on the (000-1) C-Face With Reduced Forward Degradation

IEEJ Transactions on Industry Applications

Electronic Engineering

Manufacturing Engineering

English

Related publications

Metastable Defects in Low-Energy Electron Irradiated N-Type 4h-SiC

Materials Science Forum

English

Deep Levels in Iron Doped N- And P-Type 4h-SiC

Journal of Applied Physics

English

Effect of Deep-Level Defects on Transient Photoconductivity of Semi-Insulating 4h-SiC

Acta Physica Polonica A

English

Major Deep Levels With the Same Microstructures Observed in N-Type 4H–SiC and 6H–SiC

Journal of Applied Physics

English

Photoluminescence Properties of Erbium Doped InGaN Epilayers

Applied Physics Letters

English

Minority Carrier Trap in N-Type 4H–SiC Schottky Barrier Diodes

Materials Science

Inorganic Chemistry

Chemical Engineering

Condensed Matter Physics

English

Appearance of Local Strain Fields and High Electrical Conductivity of Macro-Defects in P+-Implanted 4h-SiC

Journal of Applied Physics

English

Primary Photoluminescence in As-Neutron (Electron) -Irradiated N-Type 6h-SiC

Journal of Applied Physics

English

Microstructural Interpretation of Ni Ohmic Contact on N-Type 4H–SiC

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures

English