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Publications by Ivor Guiney
Enhancement-Mode Metal–insulator–semiconductor GaN/AlInN/GaN Heterostructure Field-Effect Transistors on Si With a Threshold Voltage of +3.0 v and Blocking Voltage Above 1000 V
Applied Physics Express
Engineering
Astronomy
Physics
Dual Barrier InAlN/AlGaN/GaN-on-silicon High-Electron-Mobility Transistors With Pt- And Ni-Based Gate Stacks
Physica Status Solidi (A) Applications and Materials Science
Surfaces
Electronic Engineering
Condensed Matter Physics
Materials Chemistry
Optical
Electrical
Magnetic Materials
Films
Coatings
Electronic
Interfaces
Related publications
Si3N4/AlGaN/GaN–metal–insulator–semiconductor Heterostructure Field–effect Transistors
Applied Physics Letters
Astronomy
Physics
Low Cost High Voltage GaN Polarization Superjunction Field Effect Transistors
Physica Status Solidi (A) Applications and Materials Science
Surfaces
Electronic Engineering
Condensed Matter Physics
Materials Chemistry
Optical
Electrical
Magnetic Materials
Films
Coatings
Electronic
Interfaces
High Voltage (450 V) GaN Schottky Rectifiers
Applied Physics Letters
Astronomy
Physics
Highly Doped Thin-Channel GaN-metal–semiconductor Field-Effect Transistors
Applied Physics Letters
Astronomy
Physics
7.5 kW/mm2 Current Switch Using AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field Effect Transistors on SiC Substrates
Electronics Letters
Electronic Engineering
Electrical
Potential Performance of SiC and GaN Based Metal Semiconductor Field Effect Transistors
Brazilian Journal of Physics
Astronomy
Physics
Reverse Gate Bias Stress on High-Voltage AlGaN/GaN-on-Si Heterostructure FETs
Modelling the Threshold Voltage for P-Channel E-Mode GaN HFETs
IET Power Electronics
Electronic Engineering
Electrical
Investigation of the Interface Between Silicon Nitride Passivations and AlGaN/AlN/GaN Heterostructures by C(V) Characterization of Metal-Insulator-Semiconductor-Heterostructure Capacitors
Journal of Applied Physics
Astronomy
Physics
