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Publications by J. Ackaert
Correlation Between Hot Carrier Stress, Oxide Breakdown and Gate Leakage Current for Monitoring Plasma Processing Induced Damage on Gate Oxide
Related publications
A New Approach to Simulating N-Mosfet Gate Current Degradation by Including Hot-Electron Induced Oxide Damage
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Model and Analysis of Gate Leakage Current in Ultrathin Nitrided Oxide MOSFETs
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Gate Oxide Reliability and Deuterated Cmos Processing
Failure Analysis Using IDD Current Leakage and Photo Localization for Gate Oxide Defect of CMOS VLSI
Metal-Gate-Induced Reduction of the Interfacial Layer in Hf Oxide Gate Stacks
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
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Reliable Cache Design With Detection of Gate Oxide Breakdown Using BIST
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Investigation of Gate-Induced Drain Leakage (GIDL) Current in Thin Body Devices: Single-Gate Ultra-Thin Body, Symmetrical Double-Gate, and Asymmetrical Double-Gate MOSFETs
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
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Interface Trap Effect on Gate Induced Drain Leakage Current in Submicron N-MOSFET's
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