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Publications by J. De Santis

Back-Gated Buried Oxide MOSFETs in a High-Voltage Bipolar Technology for Bonded Oxide/Soi Interface Characterization

IEEE Electron Device Letters

Electronic Engineering

Magnetic Materials

English

Related publications

SOI Back Reflectors for Tb Doped Oxide Electroluminescent Devices

English

A New Charge-Pumping Technique for Profiling the Interface-States and Oxide-Trapped Charges in MOSFETs

IEEE Transactions on Electron Devices

Electronic Engineering

Magnetic Materials

English

Intrinsic Threshold Voltage Fluctuations in Decanano MOSFETs Due to Local Oxide Thickness Variations

IEEE Transactions on Electron Devices

Electronic Engineering

Magnetic Materials

English

Implant Metrology for Bonded SOI Wafers Using a Surface Photo-Voltage Technique

English

Low Voltage SOI Circuit Technology

English

Threshold-Voltage Instability in 4h-SiC MOSFETs With Nitrided Gate Oxide Revealed by Non-Relaxation Method

Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

English

Analytical Temperature-Rise Model for SOI MOSFETs

English

Oxide – Organic Heterostructures: A Case Study of Charge Displacement Absence at a SnO2 – Copper Phthalocyanine Buried Interface

Physical Chemistry Chemical Physics

Theoretical Chemistry

English

Characterization of Ultrathin SOI Film and Application to Short Channel MOSFETs

Mechanics of Materials

Electronic Engineering

Mechanical Engineering

Materials Science

English