Intrinsic Threshold Voltage Fluctuations in Decanano MOSFETs Due to Local Oxide Thickness Variations

IEEE Transactions on Electron Devices - United States
doi 10.1109/16.974757
Full Text
Abstract

Available in full text

Date
Authors
Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Related search

Impact of Scattering on Random Dopant Induced Current Fluctuations in Decanano MOSFETs

2004English

Threshold-Voltage Instability in 4h-SiC MOSFETs With Nitrided Gate Oxide Revealed by Non-Relaxation Method

Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
EngineeringAstronomyPhysics
2016English

Intrinsic Parameter Fluctuations in Conventional MOSFETs Until the End of the ITRS: A Statistical Simulation Study

Journal of Physics: Conference Series
AstronomyPhysics
2006English

Back-Gated Buried Oxide MOSFETs in a High-Voltage Bipolar Technology for Bonded Oxide/Soi Interface Characterization

IEEE Electron Device Letters
Electronic EngineeringOpticalElectricalMagnetic MaterialsElectronic
1998English

Statistics of Subthreshold Neuronal Voltage Fluctuations Due to Conductance-Based Synaptic Shot Noise

Chaos
Nonlinear PhysicsApplied MathematicsMathematical PhysicsStatisticalMedicineAstronomyPhysics
2006English

Shell Thickness-Dependent Tunable Threshold Voltage Single Quantum Dot Rectification Diode

English

Random Telegraph Signal Amplitudes in Sub 100 Nm (Decanano) MOSFETs: A 3D 'Atomistic' Simulation Study

English

Determination of Correlation Length for Thickness Fluctuations in Thin Oxide and Fluoride Films

Journal of Physics D: Applied Physics
SurfacesUltrasonicsCondensed Matter PhysicsAcousticsOpticalMagnetic MaterialsFilmsCoatingsElectronic
2009English

Particle Transport Due to Magnetic Fluctuations

1994English

Amanote Research

Note-taking for researchers

Follow Amanote

© 2024 Amaplex Software S.P.R.L. All rights reserved.

Privacy PolicyRefund Policy