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Publications by Jer-Shen Maa

Growth of GaN Film on 150mm Si (111) Using Multilayer AlN∕AlGaN Buffer by Metal-Organic Vapor Phase Epitaxy Method

Applied Physics Letters
AstronomyPhysics
2007English

Related publications

Metal Organic Vapour-Phase Epitaxy Growth of GaN Wires on Si (111) for Light-Emitting Diode Applications

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Catalyst-Free Growth of High-Optical Quality GaN Nanowires by Metal-Organic Vapor Phase Epitaxy

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Very High Quality AlN Grown on (0001) Sapphire by Metal-Organic Vapor Phase Epitaxy

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Aluminum Incorporation Into AlGaN Grown by Low-Pressure Metal Organic Vapor Phase Epitaxy

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GaN/AlN Resonant Tunneling Diode With High Peak-To-Valley Current Ratio Grown by Metal-Organic Vapor Phase Epitaxy

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Growth and Characterization of InGaAs Nanowires Formed on GaAs(111)B by Selective-Area Metal Organic Vapor Phase Epitaxy

Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
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Growth of an AlN Epilayer by Using Mixed-Source Hydride Vapor Phase Epitaxy

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Optimization of Low Temperature GaN Buffer Layers for Halide Vapor Phase Epitaxy Growth of Bulk GaN

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Infrared Reflection of GaN and AlGaN Thin Film Heterostructures With AlN Buffer Layers

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