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Publications by Joan M. Redwing
Current Limitation After Pinch-Off in AlGaN/GaN FETs
MRS Internet Journal of Nitride Semiconductor Research
Related publications
Effects of Substrate Defects on the Gate Leakage Current of AlGaN/GaN Heterojunction FETs Fabricated on Na Flux Bulk GaN
Effects of P-GaN Capping Layer on the Current Collapse Behaviors in Normally-Off P-GaN Gate AlGaN/GaN HFETs
Reverse Gate Bias Stress on High-Voltage AlGaN/GaN-on-Si Heterostructure FETs
Polarization Effects in AlGaN/GaN and GaN/AlGaN/GaN Heterostructures
Journal of Applied Physics
Astronomy
Physics
Base Transit Time in Abrupt GaN/InGaN/GaN and AlGaN/GaN/AlGaN HBTs
MRS Internet Journal of Nitride Semiconductor Research
Normally-Off AlGaN/GaN MIS-HFETs Using Non-Polar A-Plane
Off-State Leakage Current Reduction in AlGaN/GaN High Electron Mobility Transistors by Combining Surface Treatment and Post-Gate Annealing
Semiconductor Science and Technology
Electronic Engineering
Condensed Matter Physics
Optical
Materials Chemistry
Electrical
Magnetic Materials
Electronic
Ultralow Reverse Leakage Current in AlGaN/GaN Lateral Schottky Barrier Diodes Grown on Bulk GaN Substrate
Applied Physics Express
Engineering
Astronomy
Physics
Mechanism of Radio-Frequency Current Collapse in GaN–AlGaN Field-Effect Transistors
Applied Physics Letters
Astronomy
Physics
