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Publications by John Epple
Characterization of GaAs-based N-N and P-N Interface Junctions Prepared by Direct Wafer Bonding
Journal of Applied Physics
Astronomy
Physics
Related publications
A Theoretical Treatment of THz Resonances in Semiconductor GaAs P–n Junctions
Materials
Materials Science
Condensed Matter Physics
Direct and Indirect Transitions in (GaAs)n/(AlAs)n Superlattices With N=1-15
Perovskite P-N Junctions: Strong Depletion in Hybrid Perovskite P-N Junctions Induced by Local Electronic Doping (Adv. Mater. 15/2018)
Advanced Materials
Mechanics of Materials
Materials Science
Nanotechnology
Mechanical Engineering
Nanoscience
Axial P–n Junctions in GaN Microrods
Physica Status Solidi (B): Basic Research
Optical
Electronic
Condensed Matter Physics
Magnetic Materials
Tunneling Anisotropic Magnetoresistance in Epitaxial CoFe/n-GaAs Junctions
Applied Physics Letters
Astronomy
Physics
Direct Assessment of P–n Junctions in Single GaN Nanowires by Kelvin Probe Force Microscopy
Nanotechnology
Mechanics of Materials
Electronic Engineering
Mechanical Engineering
Materials Science
Nanoscience
Electrical
Bioengineering
Nanotechnology
Chemistry
N,n′-Dibenzyl-N,n′-Dimethyl-N′′-(P-Tolyl)phosphoric Triamide
Acta Crystallographica Section E Structure Reports Online
RF Characteristics of GaAs/InGaAsN/GaAs P-N-P Double Heterojunction Bipolar Transistors
Simulation of Interface States Effect on the Scanning Capacitance Microscopy Measurement of P–n Junctions
Applied Physics Letters
Astronomy
Physics