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Publications by Junxia Shi
Incorporation of Al or Hf in Atomic Layer Deposition TiO2 for Ternary Dielectric Gate Insulation of InAlN/GaN and AlGaN/GaN Metal-Insulator-Semiconductor-Heterojunction Structure
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Surfaces
Films
Interfaces
Condensed Matter Physics
Coatings
Related publications
Atomic Layer Deposition of Gallium Oxide Films as Gate Dielectrics in AlGaN/GaN Metal–Oxide–Semiconductor High-Electron-Mobility Transistors
Nanoscale Research Letters
Materials Science
Nanotechnology
Condensed Matter Physics
Nanoscience
Atomic Layer Deposited HfO2 Based Metal Insulator Semiconductor GaN Ultraviolet Photodetectors
Current Applied Physics
Materials Science
Astronomy
Physics
Si3N4/AlGaN/GaN–metal–insulator–semiconductor Heterostructure Field–effect Transistors
Applied Physics Letters
Astronomy
Physics
The Characteristics of Fluorinated Gate Dielectric AlGaN/GaN MIS-HEMT
IEICE Electronics Express
Electronic Engineering
Condensed Matter Physics
Optical
Electrical
Magnetic Materials
Electronic
Effects of P-GaN Capping Layer on the Current Collapse Behaviors in Normally-Off P-GaN Gate AlGaN/GaN HFETs
Gate Current Analysis of AlGaN/GaN on Silicon Heterojunction Transistors at the Nanoscale
Applied Physics Letters
Astronomy
Physics
Polarization Effects in AlGaN/GaN and GaN/AlGaN/GaN Heterostructures
Journal of Applied Physics
Astronomy
Physics
Normally-Off P-GaN Gate InAlN/GaN HEMTs Grown on Silicon Substrates
Surface Passivation of GaN and GaN/AlGaN Heterostructures by Dielectric Films and Its Application to Insulated-Gate Heterostructure Transistors
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
