Amanote Research
Register
Sign In
Discover open access scientific publications
Search, annotate, share and cite publications
Publications by K.C. Aw
Dual Model Describing Effects of Evaporated Metal Gate on Low-K Dielectric Methylsilsesquioxane in Metal Oxide Semiconductor Capacitor Structure
Semiconductor Physics, Quantum Electronics and Optoelectronics
Electronic Engineering
Optics
Molecular Physics,
Optical
Electrical
Atomic
Magnetic Materials
Electronic
Related publications
Improved Electrical Properties of Metal-Oxide-Semiconductor Capacitor With HfTiON Gate Dielectric by Using HfSiON Interlayer
Applied Physics Letters
Astronomy
Physics
Alternative Surface Passivation on Germanium for Metal-Oxide-Semiconductor Applications With High-K Gate Dielectric
Applied Physics Letters
Astronomy
Physics
Improved Electrical Properties of Ge Metal-Oxide-Semiconductor Capacitor With HfTa-based Gate Dielectric by Using TaOxNy Interlayer
Applied Physics Letters
Astronomy
Physics
A New Tungsten Gate Metal Oxide Semiconductor Capacitor Using a Chemical Vapor Deposition Process
Journal of the Electrochemical Society
Surfaces
Condensed Matter Physics
Optical
Electrochemistry
Sustainability
Materials Chemistry
Magnetic Materials
Renewable Energy
Films
Coatings
Electronic
the Environment
High Performance High-Κ/Metal Gate Complementary Metal Oxide Semiconductor Circuit Element on Flexible Silicon
Applied Physics Letters
Astronomy
Physics
Electrical Characteristics and Reliability Properties of Metal-Oxide-Semiconductor Field-Effect Transistors With La2O3 Gate Dielectric
Journal of Applied Physics
Astronomy
Physics
Effects of NO Annealing and GaO[sub X]N[sub Y] Interlayer on GaN Metal-Insulator-Semiconductor Capacitor With SiO[sub 2] Gate Dielectric
Journal of the Electrochemical Society
Surfaces
Condensed Matter Physics
Optical
Electrochemistry
Sustainability
Materials Chemistry
Magnetic Materials
Renewable Energy
Films
Coatings
Electronic
the Environment
Effects of Postgate Dielectric Treatment on Germanium-Based Metal-Oxide-Semiconductor Device by Supercritical Fluid Technology
Applied Physics Letters
Astronomy
Physics
Technology Computer-Aided Design Simulation Study for a Strained InGaAs Channel N-Type Metal-Oxide-Semiconductor Field-Effect Transistor With a High-K Dielectric Oxide Layer and a Metal Gate Electrode
Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Surfaces
Electronic Engineering
Condensed Matter Physics
Instrumentation
Electronic
Optical
Materials Chemistry
Electrical
Magnetic Materials
Films
Process Chemistry
Coatings
Technology
