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Publications by Phillippe Godignon
Modeling of Inhomogeneous 4h-SiC Schottky and JBS Diodes in a Wide Temperature Range
Materials Science Forum
Related publications
Wide Temperature Range Integrated Bandgap Voltage References in 4H–SiC
IEEE Electron Device Letters
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Minority Carrier Trap in N-Type 4H–SiC Schottky Barrier Diodes
Crystals
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Chemical Engineering
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Characterization of Schottky Diodes on 4h-SiC With Various Off-Axis Angles Grown by Sublimation Epitaxy
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Evaluation of SiC Schottky Diodes Using Pressure Contacts
IEEE Transactions on Industrial Electronics
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Performance Evaluation of Split Output Converters With SiC MOSFETs and SiC Schottky Diodes
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Characterization of In-Grown Stacking Faults in 4H–SiC (0001) Epitaxial Layers and Its Impacts on High-Voltage Schottky Barrier Diodes
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Parameter Extraction of Schottky Solar Cell in Wide Temperature Range Using Genetic Algorithms
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Forward Voltage Degradation of 4h-SiC Pin Diodes and High Voltage 4h-SiC Pin Diodes on the (000-1) C-Face With Reduced Forward Degradation
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SiC Schottky-Barrier Diodes Formed With TiBx and ZrBx Amorphous Layers
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