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Publications by Pierre Brosselard

Modeling of Inhomogeneous 4h-SiC Schottky and JBS Diodes in a Wide Temperature Range

Materials Science Forum

English

Influence of Different Peripheral Protections on the Breakover Voltage of a 4h-SiC GTO Thyristor

Materials Science Forum

English

Related publications

Wide Temperature Range Integrated Bandgap Voltage References in 4H–SiC

IEEE Electron Device Letters

Electronic Engineering

Magnetic Materials

English

Minority Carrier Trap in N-Type 4H–SiC Schottky Barrier Diodes

Materials Science

Inorganic Chemistry

Chemical Engineering

Condensed Matter Physics

English

Characterization of Schottky Diodes on 4h-SiC With Various Off-Axis Angles Grown by Sublimation Epitaxy

Materials Science Forum

English

Evaluation of SiC Schottky Diodes Using Pressure Contacts

IEEE Transactions on Industrial Electronics

Systems Engineering

Computer Science Applications

Electronic Engineering

English

Performance Evaluation of Split Output Converters With SiC MOSFETs and SiC Schottky Diodes

IEEE Transactions on Power Electronics

Electronic Engineering

English

Characterization of In-Grown Stacking Faults in 4H–SiC (0001) Epitaxial Layers and Its Impacts on High-Voltage Schottky Barrier Diodes

Applied Physics Letters

English

Parameter Extraction of Schottky Solar Cell in Wide Temperature Range Using Genetic Algorithms

Journal of Nano- and Electronic Physics

Materials Science

Condensed Matter Physics

English

Forward Voltage Degradation of 4h-SiC Pin Diodes and High Voltage 4h-SiC Pin Diodes on the (000-1) C-Face With Reduced Forward Degradation

IEEJ Transactions on Industry Applications

Electronic Engineering

Manufacturing Engineering

English

SiC Schottky-Barrier Diodes Formed With TiBx and ZrBx Amorphous Layers

Semiconductor Physics, Quantum Electronics and Optoelectronics

Electronic Engineering

Molecular Physics,

Magnetic Materials

English