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Publications by Ryu Hasunuma

Comprehensive Understanding of PBTI and NBTI Reliability of High-K / Metal Gate Stacks With EOT Scaling to Sub-1nm

English

Related publications

Degradation and Breakdown of Sub-1nm EOT HfO2/Metal Gate Stacks

English

The Improvement of Reliability of High-K/Metal Gate pMOSFET Device With Various PMA Conditions

Active and Passive Electronic Components

Electronic Engineering

Magnetic Materials

English

Multi-Technology Measurements of Nitrided Oxide and High-K Gate Stacks

AIP Conference Proceedings

English

A Study of Low-Frequency Noise on High-K/Metal Gate Stacks With in Situ SiOx Interfacial Layer

English

Ultimate Scaling of High-K Gate Dielectrics: Current Status and Challenges

English

Metal-Gate-Induced Reduction of the Interfacial Layer in Hf Oxide Gate Stacks

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Condensed Matter Physics

English

Ultrathin HfO[sub 2](EOT<0.75 Nm) Gate Stack With TaN∕HfN Electrodes Fabricated Using a High-Temperature Process

Electrochemical and Solid-State Letters

English

Statistical Reliability Analysis of NBTI Impact on FinFET SRAMs and Mitigation Technique Using Independent-Gate Devices

English

Intermodulation Linearity in High-K/Metal Gate 28 Nm RF CMOS Transistors

Electronics (Switzerland)

Electronic Engineering

Signal Processing

Computer Networks

Systems Engineering

English