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Publications by Satyaki Ganguly
Plasma MBE Growth Conditions of AlGaN/GaN High-Electron-Mobility Transistors on Silicon and Their Device Characteristics With Epitaxially Regrown Ohmic Contacts
Applied Physics Express
Engineering
Astronomy
Physics
Related publications
Studies of Traps in AlGaN/GaN High Electron Mobility Transistors on Silicon
Dual Barrier InAlN/AlGaN/GaN-on-silicon High-Electron-Mobility Transistors With Pt- And Ni-Based Gate Stacks
Physica Status Solidi (A) Applications and Materials Science
Surfaces
Electronic Engineering
Condensed Matter Physics
Materials Chemistry
Optical
Electrical
Magnetic Materials
Films
Coatings
Electronic
Interfaces
Linearity Characteristics of Field-Plated AlGaN/GaN High Electron Mobility Transistors for Microwave Applications
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
Engineering
Astronomy
Physics
Prostate Specific Antigen Detection Using AlGaN∕GaN High Electron Mobility Transistors
Applied Physics Letters
Astronomy
Physics
Effect of GaN Growth Pressure on the Device Characteristics of AlGaN/ GaN HEMTs on Silicon
Fast Electrical Detection of Hg(II) Ions With AlGaN∕GaN High Electron Mobility Transistors
Applied Physics Letters
Astronomy
Physics
Thermal Properties of AlGaN/GaN High Electron Mobility Transistors on 4H and 6H SiC Substrates
Physica Status Solidi (A) Applications and Materials Science
Surfaces
Electronic Engineering
Condensed Matter Physics
Materials Chemistry
Optical
Electrical
Magnetic Materials
Films
Coatings
Electronic
Interfaces
Excess Low-Frequency Noise in AlGaN/GaN-based High-Electron-Mobility Transistors
Applied Physics Letters
Astronomy
Physics
Simulation Study on Electrical Characteristic of AlGaN/GaN High Electron Mobility Transistors With AlN Spacer Layer
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
Engineering
Astronomy
Physics
