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Publications by Shigeo Yamaguchi
Reduction of Etch Pit Density in Organometallic Vapor Phase Epitaxy-Grown GaN on Sapphire by Insertion of a Low-Temperature-Deposited Buffer Layer Between High-Temperature-Grown GaN
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
Engineering
Astronomy
Physics
Related publications
Optimization of Low Temperature GaN Buffer Layers for Halide Vapor Phase Epitaxy Growth of Bulk GaN
Journal of Crystal Growth
Inorganic Chemistry
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Photoluminescence of Carbon in Situ Doped GaN Grown by Halide Vapor Phase Epitaxy
Applied Physics Letters
Astronomy
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Low-Etch-Pit-Density GaN Substrates by Regrowth on Free-Standing GaN Films
Applied Physics Letters
Astronomy
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GaInN/GaN-Heterostructures and Quantum Wells Grown by Metalorganic Vapor-Phase Epitaxy
MRS Internet Journal of Nitride Semiconductor Research
Characterization of Vacancy-Type Defects in Heteroepitaxial GaN Grown by Low-Energy Plasma-Enhanced Vapor Phase Epitaxy
Journal of Applied Physics
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Very High Quality AlN Grown on (0001) Sapphire by Metal-Organic Vapor Phase Epitaxy
Applied Physics Letters
Astronomy
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Effect of GaN Cap Layer Grown at a Low Temperature on Electrical Characteristics of Al0.25Ga0.75N∕GaN Heterojunction Field-Effect Transistors
Applied Physics Letters
Astronomy
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Effects of Growth Temperature on InN∕GaN Nanodots Grown by Metal Organic Chemical Vapor Deposition
Journal of Applied Physics
Astronomy
Physics
Effectiveness of TiN Porous Templates on the Reduction of Threading Dislocations in GaN Overgrowth by Organometallic Vapor-Phase Epitaxy
Applied Physics Letters
Astronomy
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