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Publications by Takatomo Enoki
Novel Gate-Recess Process for the Reduction of Parasitic Phenomena Due to Side-Etching in InAlAs/InGaAs HEMTs
Related publications
InAlAs/InGaAs/InP Sub-Micron HEMTs Grown by CBE
Journal of Crystal Growth
Inorganic Chemistry
Materials Chemistry
Condensed Matter Physics
0.05-Μm-Gate InAlAs/InGaAs HEMT and Reduction of Its Short-Channel Effects
InAlAs/InGaAs/InP HEMTs С Композитным Каналом И Улучшенными Пробивными Характеристиками
Журнал технической физики
The Gate Length Reducing Process for Pseudomorphic In0.52Al0.48As/In0.7Ga0.3As HEMTs
60 Nm Self-Aligned-Gate InGaAs HEMTs With Record High-Frequency Characteristics
AlGaN/GaN MIS-HEMT Gate Structure Improvement Using Al2O3 Deposited by PEALD and BCl3 Gate Recess Etching
ECS Transactions
Engineering
A Novel InGaAs/InAlAs Insulated Gate Pseudomorphic HEMT With a Silicon Interface Control Layer Showing High DC- And RF-performance
IEEE Electron Device Letters
Electronic Engineering
Optical
Electrical
Magnetic Materials
Electronic
Electron Transport in Modulation-Doped InAlAs/InGaAs/InAlAs Heterostructures in High Electric Fields
Acta Physica Polonica A
Astronomy
Physics
Electroluminescence of Composite Channel InAlAs/InGaAs/InP/InAlAs High Electron Mobility Transistor
Journal of Applied Physics
Astronomy
Physics
