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Publications by Volker Zorngiebel
Influence of Different Peripheral Protections on the Breakover Voltage of a 4h-SiC GTO Thyristor
Materials Science Forum
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Forward Voltage Degradation of 4h-SiC Pin Diodes and High Voltage 4h-SiC Pin Diodes on the (000-1) C-Face With Reduced Forward Degradation
IEEJ Transactions on Industry Applications
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Industrial
Electrical
Manufacturing Engineering
Modelling and Simulation of 6 Pulse GTO Thyristor Converter
GTO Thyristor and Bipolar Transistor Cascode Switches
IEE Proceedings B Electric Power Applications
Wide Temperature Range Integrated Bandgap Voltage References in 4H–SiC
IEEE Electron Device Letters
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On the Site Occupancy of Dopants in 4h-SiC
Microscopy and Microanalysis
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Investigation of Regulation Properties and Influence of the Reactor-Thyristor Device on the Network on the High-Voltage Side of the Furnace Transformer
Electrotechnical Systems and Complexes
Investigation on the Mechanisms of Nitrogen Shallow Implantation Influence on Trap Properties of SiO2/n-Type 4h-SiC Interface
Acta Physica Polonica A
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Channel Width Effect on the Operation of 4h-SiC Vertical JFETs
Physica Status Solidi (A) Applications and Materials Science
Surfaces
Electronic Engineering
Condensed Matter Physics
Materials Chemistry
Optical
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Microscopic Raman Mapping of Epitaxial Graphene on 4h-SiC(0001)
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
Engineering
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