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Publications by Yi-Cherng Ferng
Improvement of Surge Protection by Using an AlGaN/GaN-Based Metal–Semiconductor–Metal Two-Dimensional Electron Gas Varactor
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
Engineering
Astronomy
Physics
Related publications
Electrical Transport of an AlGaN/GaN Two-Dimensional Electron Gas
Materials Research Society Symposium - Proceedings
Mechanics of Materials
Materials Science
Condensed Matter Physics
Mechanical Engineering
Si3N4/AlGaN/GaN–metal–insulator–semiconductor Heterostructure Field–effect Transistors
Applied Physics Letters
Astronomy
Physics
Residual Strain Effects on the Two-Dimensional Electron Gas Concentration of AlGaN/GaN Heterostructures
Journal of Applied Physics
Astronomy
Physics
Enhancing Responsivity of Porous GaN Metal-Semiconductor-Metal Ultraviolet Photodiodes by Using Photoelectrochemical Etching
Acta Physica Polonica A
Astronomy
Physics
Study of Gate Oxide Traps in HfO2/AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistors by Use of Ac Transconductance Method
Applied Physics Letters
Astronomy
Physics
Electric Potential Distributions of Two-Dimensional Electron Gas Layers at GaN/AlGaN Nano-Interfaces Observed by High Precision Phase-Shifting Electron Holography
Materia Japan
Atomic Layer Deposition of Gallium Oxide Films as Gate Dielectrics in AlGaN/GaN Metal–Oxide–Semiconductor High-Electron-Mobility Transistors
Nanoscale Research Letters
Materials Science
Nanotechnology
Condensed Matter Physics
Nanoscience
7.5 kW/mm2 Current Switch Using AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field Effect Transistors on SiC Substrates
Electronics Letters
Electronic Engineering
Electrical
Evaluation of TiN/Cu Gate Metal Scheme for AlGaN/GaN High-Electron-Mobility Transistor Application
Applied Physics Express
Engineering
Astronomy
Physics
