Amanote Research
Register
Sign In
Discover open access scientific publications
Search, annotate, share and cite publications
Publications by Yogesh N. Thakare
Performance Analysis of N-Type Gated Diode Three-Transistor DRAM in 180nm Technology
HELIX
Related publications
Comparitive Analysis of Power Optimization Using Mtcmos, Transistor Sizing & Combined Technique on 180nm Technology
IOSR journal of VLSI and Signal Processing
FinFET Reliability Analysis by Forward Gated-Diode Method
A Very Fast Method for the DC Analysis of Diode–Transistor Circuits
Circuits, Systems, and Signal Processing
Applied Mathematics
Signal Processing
Transistor Technology
Nature
Multidisciplinary
VRL-DRAM: Improving DRAM Performance via Variable Refresh Latency
Design and Analysis of CMOS Two Stage OP-AMP in 180nm and 45nm Technology
International Journal of Engineering Research and
Performance Comparison of 4T, 3T and 3T1D DRAM Cell Design on 32NM Technology
Investigation of Fast Switched CMOS Inverter Using 180nm VLSI Technology
International Journal of Computer Applications
A Study of a Data Retention Characteristic for Various Schemes of Gate Oxide Formation in Sub-50-Nm Saddle-Fin Transistor DRAM Technology