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Publications by Yoshikazu Hashino
Characterization of Schottky Diodes on 4h-SiC With Various Off-Axis Angles Grown by Sublimation Epitaxy
Materials Science Forum
Related publications
Characterization of In-Grown Stacking Faults in 4H–SiC (0001) Epitaxial Layers and Its Impacts on High-Voltage Schottky Barrier Diodes
Applied Physics Letters
Astronomy
Physics
Minority Carrier Trap in N-Type 4H–SiC Schottky Barrier Diodes
Crystals
Materials Science
Inorganic Chemistry
Chemical Engineering
Condensed Matter Physics
Surface Step Structures of SiC Epitaxial Layers Grown on Off-Axis SiC (0001)
Materia Japan
Modeling of Inhomogeneous 4h-SiC Schottky and JBS Diodes in a Wide Temperature Range
Materials Science Forum
Effect of Process Parameters on Dislocation Density in Thick 4h-SiC Epitaxial Layers Grown by Chloride-Based CVD on 4° Off-Axis Substrates
Materials Science Forum
Performance Evaluation of Split Output Converters With SiC MOSFETs and SiC Schottky Diodes
IEEE Transactions on Power Electronics
Electronic Engineering
Electrical
Evaluation of SiC Schottky Diodes Using Pressure Contacts
IEEE Transactions on Industrial Electronics
Control
Systems Engineering
Computer Science Applications
Electrical
Electronic Engineering
Forward Voltage Degradation of 4h-SiC Pin Diodes and High Voltage 4h-SiC Pin Diodes on the (000-1) C-Face With Reduced Forward Degradation
IEEJ Transactions on Industry Applications
Electronic Engineering
Industrial
Electrical
Manufacturing Engineering
Graphene Epitaxially Grown on Vicinal 4h-SiC(0001) Substrates
e-Journal of Surface Science and Nanotechnology
Surfaces
Mechanics of Materials
Condensed Matter Physics
Interfaces
Nanoscience
Bioengineering
Films
Biotechnology
Coatings
Nanotechnology
