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Increasing Static Noise Margin of Single-Bit-Line SRAM by Lowering Bit-Line Voltage During Reading

doi 10.1109/mwscas.2011.6026600
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Date

August 1, 2011

Authors
Shunji NakataHirotsugu SuzukiHiroshi MakinoShin'ichiro MutohMasayuki MiyamaYoshio Matsuda
Publisher

IEEE


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